What are the effects of ultra-fast recovery diodes?


Ultra-fast recovery diode is a semiconductor diode with good switching characteristics and short reverse recovery time. It is commonly used to make freewheeling, absorption, clamping, isolation, output and input rectifiers for switching devices of high-frequency inverter devices. The function of the switching device is fully utilized. What are the effects of ultrafast recovery diodes? Let's take a look.

With the increase of the operating switching frequency of the device, if there is no ultra-fast recovery diode for the freewheeling device of the high-frequency inverter device for freewheeling, absorbing, clamping, isolating, outputting, and inputting the rectifier, the switching device cannot perform its function and uniqueness. This is due to the effect of the ultrafast recovery diode turn-off characteristics (reverse recovery time t, reverse recovery charge q, reverse peak current i).

The optimal parameters of the ultra-fast recovery diode and the high-frequency switching device work in coordination, so that the overvoltage spikes and high-frequency interference voltages caused by the commutation of the switching devices in the high-frequency inverter circuit are minimized, and the functions of the switching devices are fully utilized.

Ultra-fast recovery diode features:

1、 ultra-fast recovery time

2、 high current capacity

3、 high resistance to surge current capability

4、 low forward pressure drop

5、 low reverse leakage current

The above is the role of ultra-fast recovery diodes. In simple terms, the switching devices of high-frequency inverter devices are used to rectify, absorb, isolate, output, and input rectifiers.



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